| PART |
Description |
Maker |
| W3EG6464S-BD4 |
512MB - 64Mx64 DDR SDRAM UNBUFFERED w/PLL 512MB 64Mx64 DDR SDRAM的缓冲瓦锁相
|
STMicroelectronics N.V.
|
| HYMD264G726DLF8N-D43 HYMD264G726DLF8N-J HYMD264G72 |
64M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
DDR SDRAM - Registered DIMM 512MB
|
Hynix Semiconductor, Inc.
|
| H5DU5162EFR-E3J H5DU5162EFR-FAJ H5DU5162EFR-J3J H5 |
512Mb DDR SDRAM
|
Hynix Semiconductor
|
| HY5DU121622DTP HY5DU121622DLTP |
512Mb DDR SDRAM
|
Hynix Semiconductor
|
| HY5DU121622BLT HY5DU121622BT HY5DU12822BLT HY5DU12 |
512Mb DDR SDRAM
|
Hynix Semiconductor
|
| HYMD564M646BLP6-D43 |
DDR SDRAM - SO DIMM 512MB
|
Hynix Semiconductor
|
| K4H511638B-TC/LB3 |
DDR Sdram 512Mb B-die
|
Samsung Semiconductor
|
| HY5DU121622ALT-D4 HY5DU121622ALT-M HY5DU12422AT HY |
DDR SDRAM - 512Mb
64M X 8 DDR DRAM, 0.7 ns, PDSO66
32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| HY5DU12822DTP-D43 HY5DU12822DLTP-D43 HY5DU12822DLT |
32M X 16 DDR DRAM, 0.75 ns, PDSO66
64M X 8 DDR DRAM, 0.75 ns, PDSO66
512Mb DDR SDRAM
|
HYNIX SEMICONDUCTOR INC
|
| HY5DU121622BT-D4 HY5DU12822BT HY5DU12822BTP-H HY5D |
32M X 16 DDR DRAM, 0.7 ns, PDSO66
DDR SDRAM - 512Mb
64M X 8 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| HYS64D64020GDL-6-A HYS64D64020GDL-7-A HYS64D64020G |
512MB (64Mx64) PC2100 2-bank 12MB的（64Mx64）PC2100 2银行
512MB (64Mx64) PC1600 2-bank 12MB的（64Mx64）PC1600 2银行
DDR SDRAM Modules - 512MB (64Mx64) PC2100 2-bank
DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank
|
Infineon Technologies AG
Unisonic Technologies Co., Ltd.
|
| W3EG7264S403JD3 W3EG7264S335JD3 W3EG7264S265JD3 W3 |
512MB - 64Mx72 DDR SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
